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november 2011 doc id 010029 rev 2 1/18 18 STRH8N10 rad-hard n-channel 100 v, 6 a power mosfet features fast switching 100% avalanche tested hermetic package 70 krad tid see radiation hardened applications satellite high reliability description this n-channel power mosfet is developed with stmicroelectronics unique stripfet ? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. figure 1. internal schematic diagram note: contact st sales office for information about the specific conditions for product in die form and for other packages. v dss i d r ds(on) q g 100 v 6 a 0.30 ? 22 nc to-39 table 1. device summary order code escc part number quality level package lead finish mass (g) temp. range eppl STRH8N10n1 - engineering model to-39 gold 1.2 -55 to 150c - STRH8N10ng tbd escc flight target www.st.com
contents STRH8N10 2/18 doc id 010029 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (cur ves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STRH8N10 electrical ratings doc id 010029 rev 2 3/18 1 electrical ratings (t c = 25c unless otherwise specified) table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j > 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 100 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s. drain current (continuous) at t c = 25c 6 a i d (1) drain current (continuous) at t c = 100c 4.1 a i dm (4) 4. pulse width limited by safe operating area. drain current (pulsed) 24 a p tot (1) total dissipation at t c = 25c 25 w dv/dt (5) 5. i sd 6 a, di/dt 1060 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 6.4 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case 5.0 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 4a e as (1) single pulse avalanche energy (starting tj=25c, id=iar, vdd=50v) 457 mj e as single pulse avalanche energy (starting tj=110c, id=iar, vdd=50v) 134 mj
electrical ratings STRH8N10 4/18 doc id 010029 rev 2 e ar repetitive avalanche (vdd = 50 v, i ar = 4 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 4.3 mj e ar repetitive avalanche (vdd = 50 v, i ar = 4 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 1.4 mj 1. maximum rating value. table 4. avalanche characteristics (continued) symbol parameter value unit
STRH8N10 electrical characteristics doc id 010029 rev 2 5/18 2 electrical characteristics (t case = 25c unless otherwise specified). 2.1 pre-irradiation table 5. on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 100% bv dss 1ma 80% bv dss 80% bv dss, t c = 125 c 10 100 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v v gs = 20 v , t c = 125 c v gs = -20 v , t c = 125 c -100 -200 100 200 na v gs(th) gate threshold voltage v ds =v gs , i d = 1ma v ds =v gs , i d = 1ma , t c = 125 c v ds =v gs , i d = 1ma , t c = -55 c 2 1.5 2.1 4.5 3.7 5.5 v r ds(on) static drain-source on resistance v gs = 12 v, i d = 4 a v gs = 12 v, i d = 4 a, t c = 125 c 0.30 0.72 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss (1) c rss 1. this value is guaranteed over the full range of temperature. input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0v 527 76 31 659 95 39 791 114 47 pf pf pf c oss eq. (1) equivalent output capacitance (2) 2. this value is defined as the ratio between the q oss and the voltage value applied. v dd = 80 v, v gs =0v 162 pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 50 v, i d = 4 a, v gs = 12 v 15 3 4 18.5 4 5.5 22 5 7 nc nc nc r g (3) 3. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 1.6 ?
electrical characteristics STRH8N10 6/18 doc id 010029 rev 2 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 50 v, i d = 4 a, r g = 4.7 ?, v gs = 12 v 6 4 13 3 10.5 10.5 21.5 5.5 15 17 30 8 ns ns ns ns table 8. source drain diode (1) 1. refer to the figure 16: source drain diode . symbol parameter test conditions min. typ. max unit i sd i sdm (2) 2. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 6 24 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 8 a, v gs = 0 i sd = 8 a, v gs = 0, t c = 125 c 1.5 1.275 v t rr (4) q rr (4) i rrm (4) 4. not tested in production, guaranteed by process. reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a, di/dt = 100 a/s v dd = 17 v, tj = 25 c 196 245 1.2 10 294 ns c a t rr (4) q rr (4) i rrm (4) reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a, di/dt = 100 a/s, v dd = 17 v, tj = 150 c 282 352 1.7 10.5 422 ns c a
STRH8N10 radiation characteristics doc id 010029 rev 2 7/18 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested for total ionizing dose, according to the escc 22900 specification window 1, using the to-39 package. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-39 package: ?v gs bias: + 15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , table 10 and table 11 ): before irradiation after irradiation after 24 hrs @ room temperature after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +1 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v 1.5 -1.5 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma -25% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma -60% / + 30% v r ds(on) static drain-source on resistance v gs = 10 v; i d = 4 a 10% ? table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit q g total gate charge i g = 0.2 ma, v gs = 12 v, v ds = 50 v, i ds = 4 a -5% / + 40% nc q gs gate-source charge 35% q gd gate-drain charge -5% / + 130%
radiation characte ristics STRH8N10 8/18 doc id 010029 rev 2 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect according to mil-std-750e method 1080 (bias circuit in figure 3: single event effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if th e fluence reaches 3e+5 ions/cm2. segr test: the gate current is monitored every 100 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? no seb ? segr test produces the following soa (see table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values ? .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 8 a, v gs = 0 2% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = -2 v @v gs = -5 v @v gs = -10 v @v gs = -20 v kr 32 768 94 100 80 60 30 10
STRH8N10 radiation characteristics doc id 010029 rev 2 9/18 figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 0 10 20 3 0 40 50 60 70 8 0 90 100 -20 -15 -10 -5 0 vd s ( % vd s m a x) vg s (v) kr ( 3 2 mev.cm2/mg)
electrical characteristics (curves) STRH8N10 10/18 doc id 010029 rev 2 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations i d 15 10 5 0 0 10 v d s (v) 20 (a) 20 25 v g s = 5 v v g s = 6 v v g s = 7 v v g s = 10 v hv 33 200 0.1 1.0 10.0 3 .50 4.00 4.50 5.00 5.50 6.00 25c -55c 15 0 c vg s (v) i d (a) v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v d s = 50 v i d = 8 a i d = 4 a i d = 2 a 12 hv 33 210 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 ci ss co ss cr ss hv 33 220
STRH8N10 electrical characteristics (curves) doc id 010029 rev 2 11/18 figure 10. normalized bv dss vs temperature figure 11. static drain-source on resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature figure 14. source drain-diode forward characteristics r d s (on) 3 00 200 100 0 1 3 i d (a) (m ? ) 24 400 500 600 700 v g s =12 v 8 00 567 hv 33 240 v s d 1 3 i s d (a) (v) 2 6 4 5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 7 1. 3 t j = -50 c t j = 150 c t j = 25 c hv 33 270
test circuit STRH8N10 12/18 doc id 010029 rev 2 5 test circuit figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 16. source drain diode
STRH8N10 test circuit doc id 010029 rev 2 13/18 figure 17. unclamped inductive load test circuit (single pulse and repetitive)
package mechanical data STRH8N10 14/18 doc id 010029 rev 2 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STRH8N10 package mechanical data doc id 010029 rev 2 15/18 figure 18. to-39 drawing table 13. to-39 mechanical data dim. mm inch min. typ. max. min. typ. max. a 12.70 - 14.20 0.500 - 0.559 b 0.40 0.49 0.016 0.019 c 0.58 0.74 0.023 0.029 d 6.00 6.40 0.237 0.252 e 8.15 8.25 0.358 0.362 f 9.10 9.20 0.358 0.362 g 4.93 5.23 0.194 0.206 h 0.85 0.95 0.033 0.037 i 0.75 0.85 0.029 0.033 l 42 48
order codes STRH8N10 16/18 doc id 010029 rev 2 7 order codes contact st sales office for information about the specific conditions for products in die form and other package options. table 14. ordering information order code escc part number quality level eppl package lead finish marking packing STRH8N10n1 - engineering model - to-39 gold STRH8N10n1 strip pack STRH8N10ng tbd escc flight target tbd
STRH8N10 revision history doc id 010029 rev 2 17/18 8 revision history table 15. document revision history date revision changes 20-may-2011 1 first release. 09-nov-2011 2 updated dynamic values on table 6: dynamic , table 7: switching times .
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